SpletTPCF8101.LF(J) Electronics is New Original Stock at YIC Distributor. Same Day Shipping. View TPCF8101.LF(J) PDF Datasheet & Price. RFQ TPCF8101.LF(J) Toshiba Semiconductor and Storage Online. Splet28. mar. 2024 · TPCF8101(TE85L,F,M Toshiba MOSFET P-ch -12V -6A VS-8 datasheet, inventory & pricing. Skip to Main Content +44 (0) 1494-427500. Contact Mouser (UK) +44 …
TPCF8101, Toshiba Semiconductor and Storage TPCF8101 Price …
SpletTPCF8101 2 2002-08-28 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ±10 µA Drain cut-off current IDSS VDS = −12 V, VGS = 0 V −10 µA SpletTPCF8101 2 2002-08-28 Electrical Characteristics (Ta 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS 8 V, VDS 0 V 10 A Drain cut-off current IDSS VDS 12 V, VGS 0 V 10 A V (BR) DSS ID 10 mA, VGS 0 V 12 Drain-source breakdown voltage V (BR) DSX ID 10 mA, VGS 8 V 4 V gary carruthers south shields
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SpletTPCF8101_07 Datasheet下载: TPCF8101_07 TPCF8101_07描述: TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8101_07应用: 晶体 晶体管 场 … SpletHome Company Profile Factory Warehouse Brochure Showroom Inventory Contact Us Shenzhen XinNanKeDa Electronic Co., LTD - Inventory (Page 8) SpletTPCF8101: 封装: Reel : 封装: Cut Tape : 商标: Toshiba : 配置: Single : 高度: 0.8 mm : 长度: 2.9 mm : 产品类型: MOSFET : 工厂包装数量: 工厂包装数量: 4000 : 子类别: blacksmith vice